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US Patent 11411113 FinFETs and methods of forming FinFETs
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Patent
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Date Filed
July 13, 2020
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Date of Patent
August 9, 2022
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Patent Application Number
16927082
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Patent Citations
US Patent 10164114 FinFETs and methods of forming FinFETs
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US Patent 10930557 Self-aligned contacts
US Patent 10714620 FinFETs and methods of forming FinFETs
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Patent Citations Received
US Patent 12087861 FinFETs and methods of forming FinFETs
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Patent Inventor Names
Chin-Hsiang Lin
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Tien-I Bao
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Tai-Chun Huang
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11411113
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Patent Primary Examiner
Mark V. Prenty
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CPC Code
H01L 29/785
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H01L 2029/7858
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H01L 29/66795
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