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US Patent 11417658 NAND string utilizing floating body memory cell

Patent 11417658 was granted and assigned to Zeno Semiconductor on August, 2022 by the United States Patent and Trademark Office.

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Is a

Patent attributes

Patent Applicant

Zeno Semiconductor

Current Assignee

Zeno Semiconductor

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Date of Patent

August 16, 2022

Patent Application Number

17219564

Date Filed

March 31, 2021

Patent Citations

US Patent 10181471 Memory cell comprising first and second transistors and methods of operating

US Patent 10644001 Semiconductor memory device having an electrically floating body transistor

US Patent 10644002 Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle

US Patent 10707209 Asymmetric semiconductor memory device having electrically floating body transistor

US Patent 10734076 Memory cells, memory cell arrays, methods of using and methods of making

US Patent 10748904 Method of maintaining the state of semiconductor memory having electrically floating body transistor

US Patent 10797055 Memory cell comprising first and second transistors and methods of operating

US Patent 10804276 Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor

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Patent Citations Received

US Patent 11882684 Memory device comprising an electrically floating body transistor

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US Patent 11769832 Memory device comprising an electrically floating body transistor and methods of using

US Patent 12094526 Memory device comprising electrically floating body transistor

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US Patent 11943937 Memory cell and memory array select transistor

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Patent Primary Examiner

CPC Code

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NAND string configurations and semiconductor memory arrays that include such NAND string configurations are provided. Methods of making semiconductor memory cells used in NAND string configurations are also described.

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