US Patent 11417755 Differentially strained quantum dot devices

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer; a first gate above the quantum well stack, wherein the first gate includes a first gate metal; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal, and a material structure of the second gate metal is different from a material structure of the first gate metal; wherein the quantum well layer has a first strain under the first gate, a second strain under the second gate, and the first strain is different from the second strain.