US Patent 11422209 Magnetic tunnel barriers and related heterostructure devices and methods

Disclosed herein are devices, systems, and methods that provide improved tunneling magnetoresistance (TMR) through the use of innovative device structures and heterostructure layers therein. Particularly, two or more magnetic layers form a heterostructure core of the switching device, with control of current passing through the heterostructure determined by an applied magnetic field that modifies the magnetization of the heterostructure from a ground magnetic state that is layered antiferromagnetic.