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US Patent 11424367 Wrap-around contacts including localized metal silicide
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Patent
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Date Filed
December 16, 2020
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Date of Patent
August 23, 2022
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Patent Application Number
17124458
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Patent Citations
US Patent 10497792 Contacts for highly scaled transistors
US Patent 10193090 Method of manufacturing a semiconductor device and a semiconductor device
US Patent 10236218 Methods, apparatus and system for forming wrap-around contact with dual silicide
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US Patent 10276442 Wrap-around contacts formed with multiple silicide layers
US Patent 10361277 Low resistivity wrap-around contacts
US Patent 10680062 III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereof
US Patent 10424651 Forming nanosheet transistor using sacrificial spacer and inner spacers
Patent Inventor Names
Eric Miller
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Yann Mignot
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Andrew M. Greene
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Julien Frougier
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11424367
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Patent Primary Examiner
David C Spalla
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CPC Code
H01L 27/1211
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H01L 29/0642
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H01L 29/0649
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H01L 29/0653
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H01L 29/0665
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H01L 29/0669
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H01L 29/0673
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H01L 29/41791
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H01L 29/66439
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H01L 29/6653
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