Patent attributes
A method for forming a silicon optical modulator with improved modulation efficiency. the method includes providing a silicon layer in a SOI substrate and forming a waveguide in the silicon layer with a rib structure respectively joining with a first slab region on one side and a second slab region on opposite side with corresponding slab thicknesses smaller than the rib structure. The method additionally includes forming multiple etched sections in each of the first slab region and the second slab regions with decreasing etching depths for sections further away from the rib structure. Furthermore, the method includes forming a PN junction in the rib structure with a moderate P/N doping level. Moreover, the method includes doping the multiple etched sections in the first/second slab region respectively with P-type/N-type impurity at increasing doping levels sequentially for sections further away from the rib structure.
