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US Patent 11430510 Multi-level ferroelectric field-effect transistor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
December 11, 2020
Date of Patent
August 30, 2022
Patent Application Number
17119032
Patent Citations
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US Patent 10510862 Semiconductor memory device
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US Patent 10056393 Application of antiferroelectric like materials in non-volatile memory devices
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US Patent 10090036 Non-volatile memory cell having pinch-off ferroelectric field effect transistor
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US Patent 10714242 Symmetrically tunable electrical resistor
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US Patent 11244999 Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end
Patent Citations Received
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US Patent 11869971 Multi-bit memory storage device
0
Patent Inventor Names
Takashi Ando
0
Nanbo Gong
0
Guy M. Cohen
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11430510
Patent Primary Examiner
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Tan T. Nguyen

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