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US Patent 11430806 Nonvolatile memory device
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Patent
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Date Filed
May 20, 2020
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Date of Patent
August 30, 2022
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Patent Application Number
16878756
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Patent Citations
US Patent 10290581 Methods of forming conductive structures including stair step or tiered structures having conductive portions
US Patent 10177224 Semiconductor device and manufacturing method thereof
US Patent 10249640 Within-array through-memory-level via structures and method of making thereof
US Patent 10134747 Semiconductor device and method of manufacturing the same
Patent Inventor Names
Chanho Kim
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Dongku Kang
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Kyunghwa Yun
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11430806
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Patent Primary Examiner
Christopher A Johnson
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CPC Code
H01L 27/11582
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