Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
August 30, 2022
Patent Application Number
17064607
Date Filed
October 7, 2020
Patent Citations
Patent Primary Examiner
A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer, wherein the bottom electrode layer comprises a gradient concentration; forming a free layer on the bottom electrode layer; forming a top electrode layer on the free layer; and patterning the top electrode layer, the free layer, and the bottom electrode layer to form a magnetic tunneling junction (MTJ).
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