US Patent 11437491 Non-conformal capping layer and method forming same

Patent 11437491 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2022 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11437491

Patent Inventor Names

Cheng-I Lin0

Chi On Chui0

Chun-Heng Chen0

Ming-Ho Lin0

Date of Patent

September 6, 2022

Patent Application Number

16880464

Date Filed

May 21, 2020

Patent Citations

‌

US Patent 10833196 FinFET structures and methods of forming the same

‌

US Patent 10510851 Low resistance contact method and structure

Patent Primary Examiner

‌

Joseph C. Nicely

A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

Timeline

No Timeline data yet.

Further Resources

Title

Author

Link

Type

Date

No Further Resources data yet.

References

Find more entities like US Patent 11437491 Non-conformal capping layer and method forming same

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Access by API