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US Patent 11443819 Memory device, integrated circuit device and method
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Date Filed
January 7, 2021
Date of Patent
September 13, 2022
Patent Applicant
Taiwan Semiconductor Manufacturing Company
Patent Application Number
17143702
Patent Citations
US Patent 10147470 Semiconductor memory device capable of performing read operation and write operation simultaneously
Patent Citations Received
US Patent 11714949 Leakage analysis on semiconductor device
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11443819
Patent Primary Examiner
Muna A Techane
CPC Code
G11C 17/00
G11C 17/18
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