US Patent 11444089 Gate-all-around field effect transistors in integrated circuits
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Patent Number
114440890
Date of Patent
September 13, 2022
0Patent Application Number
169444540
Date Filed
July 31, 2020
0Patent Citations
Patent Primary Examiner
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Patent Number
114440890
Date of Patent
September 13, 2022
0Patent Application Number
169444540
Date Filed
July 31, 2020
0Patent Citations
Patent Primary Examiner
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Patent Number
114440890
Date of Patent
September 13, 2022
0Patent Application Number
169444540
Date Filed
July 31, 2020
0Patent Citations
Patent Primary Examiner
Golden AI
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Patent Citations
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US Patent 11444089 Gate-all-around field effect transistors in integrated circuits
Article
An integrated circuit (IC) that includes a memory cell having a first p-type active region, a first n-type active region, a second n-type active region, and a second p-type active region. Each of the first and the second p-type active regions includes a first group of vertically stacked channel layers having a width W
Infobox
Is a
Patent Jurisdiction
Patent Number
114440890
Date of Patent
September 13, 2022
0Patent Application Number
169444540
Date Filed
July 31, 2020
0Patent Citations
Patent Primary Examiner
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