Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 20, 2022
0Patent Application Number
161315200
Date Filed
September 14, 2018
0Patent Primary Examiner
A semiconductor structure has a substrate including silicon and a layer of relaxed buffer material on the substrate with a thickness no greater than 300 nm. The buffer material comprises silicon and germanium with a germanium concentration from 20 to 45 atomic percent. A source and a drain are on top of the buffer material. A body extends between the source and drain, where the body is monocrystalline semiconductor material comprising silicon and germanium with a germanium concentration of at least 30 atomic percent. A gate structure is wrapped around the body.
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