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US Patent 11462253 Magnetoresistance effect element and magnetic memory

Patent 11462253 was granted and assigned to Tohoku University on October, 2022 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Patent Applicant

Tohoku University

Current Assignee

Tohoku University

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

114622530

Patent Inventor Names

Tetsuo Endoh0

Hideo Sato0

Hideo Ohno0

Shoji Ikeda0

Koichi Nishioka0

Hiroaki Honjo0

Date of Patent

October 4, 2022

Patent Application Number

164997530

Date Filed

December 28, 2017

Patent Primary Examiner

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