Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 4, 2022
Patent Application Number
16930392
Date Filed
July 16, 2020
Patent Citations
Patent Primary Examiner
Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.
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