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US Patent 11462537 Semiconductor device
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Patent
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Date Filed
July 2, 2020
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Date of Patent
October 4, 2022
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Patent Application Number
16919300
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Patent Citations
US Patent 10141312 Semiconductor devices including insulating materials in fins
US Patent 10312350 Nanosheet with changing SiGe percentage for SiGe lateral recess
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US Patent 10090382 Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same
US Patent 10157800 Semiconductor device and manufacturing method thereof
Patent Inventor Names
Geum Jong Bae
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Yeong Han Gwon
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Soo Yeon Jeong
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Dong Il Bae
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11462537
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Patent Primary Examiner
Herve-Louis Y Assouman
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CPC Code
H01L 29/7855
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H01L 23/535
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H01L 21/76232
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H01L 29/78696
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H01L 29/42392
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H01L 27/0886
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H01L 27/0924
0
H01L 29/785
0
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