Patent attributes
A method for fabricating a crown capacitor includes: forming a first supporting layer over a substrate; forming a second supporting layer above the first supporting layer; alternatively stacking first and second sacrificial layers between the first and second supporting layers to collectively form a stacking structure; forming a recess extending through the stacking structure; performing an etching process to the first sacrificial layers at a first etching rate and the second sacrificial layers at a second etching rate greater than the first etching rate, such that each second sacrificial layer and immediately-adjacent two of the first sacrificial layers collectively define a concave portion; forming a first electrode layer over a surface of the recess in which the first electrode layer has a wavy structure; removing the first and second sacrificial layers; and forming a dielectric layer and a second electrode layer over the first electrode layer.
