US Patent 11476346 Vertical transistor having an oxygen-blocking top spacer
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Patent Jurisdiction
Patent Number
114763460
Date of Patent
October 18, 2022
0Patent Application Number
169102960
Date Filed
June 24, 2020
0Patent Primary Examiner
Edits on 28 Oct, 2022
Golden AI
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US Patent 11476346 Vertical transistor having an oxygen-blocking top spacer
Article
Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes forming a top spacer trench adjacent to an upper region of the channel fin. An oxygen-blocking layer is deposited within the top spacer trench and over the upper region of the channel fin. A top spacer is formed within the top spacer trench and over a portion of the oxygen-blocking layer that is within the top spacer trench. The oxygen-blocking layer includes an oxygen gettering material.
Infobox
Is a
Patent Jurisdiction
Patent Number
114763460
Date of Patent
October 18, 2022
0Patent Application Number
169102960
Date Filed
June 24, 2020
0Patent Primary Examiner
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