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US Patent 11489057 Contact structures in semiconductor devices
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Is a
Patent
Date Filed
January 7, 2021
Date of Patent
November 1, 2022
Patent Application Number
17143771
Patent Citations
US Patent 10998241 Selective dual silicide formation using a maskless fabrication process flow
US Patent 10079210 Integrated circuit device and method of fabricating the same
US Patent 10428421 Selective deposition on metal or metallic surfaces relative to dielectric surfaces
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11489057
Patent Primary Examiner
Karen Kusumakar
CPC Code
H01L 21/28518
H01L 21/823814
H01L 21/823821
H01L 21/823871
H01L 27/0924
H01L 29/0847
H01L 29/41791
H01L 29/66795
H01L 29/7851
H01L 29/45
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