Patent attributes
A method of manufacturing a semiconductor device includes forming a stacked structure with first material layers and second material layers that are stacked alternately with each other, forming a first slit that passes through the stacked structure, forming a second slit that passes through the stacked structure, forming a contact hole between the first slit and the second slit that passes through the stacked structure, forming a sealing layer that seals the first slit, the second slit and the contact hole, forming first openings that pass through the sealing layer to form first sealing regions and partially expose the first slit to form first exposed regions, forming a first slit insulating layer by filling the first exposed regions and first sealing regions, etching the sealing layer to open the contact hole, and forming a first contact plug in the contact hole.
