US Patent 11502031 Multiple layer metal-insulator-metal (MIM) structure

An apparatus is provided, which includes a stack of a first plurality of layers interleaved with a second plurality of layers. In an example, the first plurality of layers includes conductive material, and the second plurality of layers includes insulating material. In an example, the first plurality of layers includes an upper layer and lower layer. A first via may extend through at least a portion of the stack, where the first via may be in contact with the upper layer and the lower layer. A second via may extend through at least a portion of the stack, where the second via may be isolated from the upper layer and lower layer.