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US Patent 11502243 Structured pedestal for MTJ containing devices
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Patent
Date Filed
December 28, 2020
Date of Patent
November 15, 2022
Patent Application Number
17135277
Patent Citations
US Patent 10529913 Techniques for MRAM MTJ top electrode connection
US Patent 10615334 Memory cell structure, method of manufacturing a memory, and memory apparatus
US Patent 10069064 Memory structure having a magnetic tunnel junction (MTJ) self-aligned to a T-shaped bottom electrode, and method of manufacturing the same
US Patent 10573449 Tunnel magnetoresistive effect element
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11502243
Patent Primary Examiner
Ida M. Soward
CPC Code
H01L 43/12
H01L 43/08
G11C 11/161
G11C 2211/5615
G11B 5/3909
G01R 33/098
H01L 43/02
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