Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 29, 2022
Patent Application Number
16887273
Date Filed
May 29, 2020
Patent Citations
Patent Primary Examiner
A method includes etching two source/drain regions over a substrate to form two source/drain trenches; epitaxially growing two source/drain features in the two source/drain trenches respectively; performing a cut process to the two source/drain features; and after the cut process, depositing a contact etch stop layer (CESL) over the two source/drain features.
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