US Patent 11515300 Semiconductor memory device

A semiconductor memory device includes a first chip and a second chip. The first chip includes a semiconductor substrate and a plurality of transistors disposed on a surface of the semiconductor substrate. The second chip includes a plurality of first conductive layers, a plurality of first semiconductor layers, and a plurality of memory cells disposed in intersection portions of the plurality of first conductive layers and the plurality of first semiconductor layers. The second chip includes a second semiconductor layer farther from the semiconductor substrate than the plurality of first conductive layers. The second semiconductor layer is connected to the plurality of first semiconductor layers and a first insulating layer that includes a part farther from the semiconductor substrate than a surface on a side opposite to the semiconductor substrate of the second semiconductor layer and a part closer to the semiconductor substrate than the surface.