US Patent 11515461 Superconductor devices having buried quasiparticle traps

Techniques for trapping quasiparticles in superconductor devices are provided. A superconductor device can comprise a substrate layer. The superconductor device can further comprise a first superconductor layer composed of a first superconductor material, on a first surface of a substrate layer. The superconductor device can further comprise a trapping material buried in the first superconductor layer, wherein the trapping material is formulated to trap quasiparticles.