Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 13, 2022
Patent Application Number
17200416
Date Filed
March 12, 2021
Patent Citations
Patent Primary Examiner
A method of forming a filament in a resistive random-access memory (RRAM) device includes applying a cell voltage across a resistive layer of the RRAM device, detecting an increase in a current through the resistive layer generated in response to the applied cell voltage, and in response to detecting the increase in the current, using a first switching device to reduce the current through the resistive layer.
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