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US Patent 11545545 Superjunction device with oxygen inserted Si-layers

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 16, 2020
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Date of Patent
January 3, 2023
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Patent Application Number
16930500
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Patent Citations
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US Patent 10573742 Oxygen inserted Si-layers in vertical trench power devices
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US Patent 10741638 Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
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US Patent 10510836 Gate trench device with oxygen inserted si-layers
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US Patent 10580888 Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices
Patent Inventor Names
Ling Ma
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Xiaoqiu Huang
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Sylvain Leomant
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Robert Haase
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Ravi Keshav Joshi
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Maximilian Roesch
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Martin Poelzl
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Andreas Meiser
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11545545
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Patent Primary Examiner
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Vongsavanh Sengdara
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CPC Code
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H01L 29/66734
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H01L 29/7802
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H01L 29/0696
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H01L 29/0649
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H01L 29/7395
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H01L 29/7396
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H01L 29/0623
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H01L 29/1095
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H01L 29/0865
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H01L 29/41766
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