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US Patent 11545582 Method for forming gate-all-around structure

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
November 2, 2020
Date of Patent
January 3, 2023
Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Patent Application Number
17086988
Patent Citations
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US Patent 10535738 Semiconductor structure and manufacturing method of the same
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US Patent 10755985 Gate metal patterning for tight pitch applications
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US Patent 10770290 Method for forming stacked nanowire transistors
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US Patent 11201152 Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor
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US Patent 11139400 Non-planar semiconductor device having hybrid geometry-based active region
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US Patent 10170378 Gate all-around semiconductor device and manufacturing method thereof
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US Patent 10236217 Stacked field-effect transistors (FETs) with shared and non-shared gates
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US Patent 10332970 Method for manufacturing horizontal-gate-all-around devices with different number of nanowires
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US Patent 10475935 Nanometer semiconductor devices having high-quality epitaxial layer
Patent Citations Received
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US Patent 12021153 Semiconductor structure
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11545582
Patent Primary Examiner
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Victor A Mandala
CPC Code
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H01L 29/42392
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H01L 29/66742
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H01L 29/78696
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H01L 29/66545
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H01L 27/092
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H01L 29/16
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H01L 29/0673

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