US Patent 11551755 Semiconductor device including a content reference memory
Patent 11551755 was granted and assigned to Renesas Electronics on January, 2023 by the United States Patent and Trademark Office.
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US Patent 11551755 Semiconductor device including a content reference memory
A semiconductor device includes a plurality of memory cells connected to a match line; a word line driver connected to a word line; a valid cell configured to store a valid bit indicating valid or invalid of an entry; a first precharge circuit connected to one end of the match line and configured to precharge the match line to a high level; and a second precharge circuit connected to the other end of the match line and configured to precharge the match line to a high level. The plurality of memory cells are arranged between the first precharge circuit and the second precharge circuit, and the second precharge circuit is arranged between the word line driver and the plurality of memory cells.
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