US Patent 11551760 Semiconductor memory device

A semiconductor memory device includes memory cells, a first circuit that includes a first latch group including first and second data latch circuits and a second latch group including third and fourth data latch circuits, and a control circuit configured to control a write operation during which first and second data to be written into the memory cells are stored in the first and second data latch circuits, respectively, wherein the first and second data are also stored in the third and fourth data latch circuits, respectively, while the first and second data stored in the first and second data latch circuits, respectively, are being written in the memory cells.