Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Maju Tomura0
Takatoshi Orui0
Takahiro Yokoyama0
Yoshihide Kihara0
Ryutaro Suda0
Date of Patent
January 10, 2023
0Patent Application Number
176665700
Date Filed
February 8, 2022
0Patent Citations
Patent Primary Examiner
An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.
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