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US Patent 11557509 Self-alignment etching of interconnect layers

Patent 11557509 was granted and assigned to Applied Materials on January, 2023 by the United States Patent and Trademark Office.

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A method for etching a metal containing feature is provided. Using a pattern mask, layers of material are etched to expose a portion of a metal containing feature. At least a portion of the exposed metal containing feature is etched, and is replaced by the growth of a filler dielectric. The etched portion of the metal containing feature and the filler dielectric reduce the unwanted conductivity between adjacent metal containing features.

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