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US Patent 11557601 Three-dimensional memory devices
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Patent
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Date Filed
June 26, 2020
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Date of Patent
January 17, 2023
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Patent Application Number
16913634
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Patent Citations
US Patent 10510738 Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof
US Patent 10580788 Methods for forming three-dimensional memory devices
US Patent 10665580 Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same
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US Patent 10651153 Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding
US Patent 10727215 Three-dimensional memory device with logic signal routing through a memory die and methods of making the same
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US Patent 10199326 Three-dimensional memory device with driver circuitry on the backside of a substrate and method of making thereof
US Patent 10256252 Three-dimensional memory device containing structurally reinforced pedestal channel portions and methods of making the same
Patent Citations Received
US Patent 12132040 Semiconductor storage device
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US Patent 11710727 Semiconductor storage device
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Patent Inventor Names
Kun Zhang
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11557601
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Patent Primary Examiner
Christopher A Johnson
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CPC Code
H01L 27/11578
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H01L 27/11582
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