Patent attributes
To provide a semiconductor device in which a large current can flow. To provide a semiconductor device which can be driven stably at a high driving voltage. The semiconductor device includes a semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer and apart from each other in a region overlapping with the semiconductor layer, a first gate electrode and a second gate electrode with the semiconductor layer therebetween, a first gate insulating layer between the semiconductor layer and the first gate electrode, and a second gate insulating layer between the semiconductor layer and the second gate electrode. The first gate electrode overlaps with part of the first electrode, the semiconductor layer, and part of the second electrode. The second gate electrode overlaps with the semiconductor layer and part of the first electrode, and does not overlap with the second electrode.
