US Patent 11587936 Low resistivity DRAM buried word line stack
Patent 11587936 was granted and assigned to Applied Materials on February, 2023 by the United States Patent and Trademark Office.
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Patent Jurisdiction
Patent Number
115879360
Date of Patent
February 21, 2023
0Patent Application Number
173352870
Date Filed
June 1, 2021
0Patent Citations
Patent Primary Examiner
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US Patent 11587936 Low resistivity DRAM buried word line stack
Article
Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
115879360
Date of Patent
February 21, 2023
0Patent Application Number
173352870
Date Filed
June 1, 2021
0Patent Citations
Patent Primary Examiner
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