US Patent 11594455 Semiconductor device and manufacturing method for the same

The present disclosure provides a method for fabricating a semiconductor structure, including forming an inter dielectric layer over a first region and a second region of a substrate, wherein the second region is adjacent to the first region, forming a high-k material over the inter dielectric layer in the first region and the second region, forming an oxygen capturing layer over the high-k material in the first region, and applying oxidizing agent over the oxygen capturing layer.