US Patent 11594618 FinFET devices and methods of forming

A finFET device and methods of forming a finFET device are provided. The device includes a fin and a capping layer over the fin. The device also includes a gate stack over the fin, the gate stack including a gate electrode and a gate dielectric. The gate dielectric extends along sidewalls of the capping layer. The device further includes a gate spacer adjacent to sidewalls of the gate electrode, the capping layer being interposed between the gate spacer and the fin.