US Patent 11600317 Memory device
Patent 11600317 was granted and assigned to Taiwan Semiconductor Manufacturing Company on March, 2023 by the United States Patent and Trademark Office.
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US Patent 11600317 Memory device
Article
A memory device is provided. The memory device includes a bit cell having a first invertor connected between a first node and a second node and a second invertor connected between the first node and the second node. The first invertor and the second invertor are cross coupled at a first data node and a second data node. The memory device further includes a pull down circuit connected to the second node. The pull down circuit is operative to pull down a voltage of the second node below a ground voltage in response to an enable signal.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
116003170
Date of Patent
March 7, 2023
0Patent Application Number
173324140
Date Filed
May 27, 2021
0Patent Primary Examiner
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