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US Patent 11600715 FETs and methods of forming FETs

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Date Filed
October 21, 2019
Date of Patent
March 7, 2023
Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Patent Application Number
16659124
Patent Citations
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US Patent 10453943 FETS and methods of forming FETS
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US Patent 10014224 Structure and formation method of fin-like field effect transistor
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US Patent 10062772 Preventing bridge formation between replacement gate and source/drain region through STI structure
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US Patent 10164098 Method of manufacturing semiconductor device
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US Patent 10297601 Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
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US Patent 10483377 Devices and methods of forming unmerged epitaxy for FinFet device
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11600715
Patent Primary Examiner
‌
Joseph C. Nicely

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