US Patent 11605653 Semiconductor device and display device

Disclosed is a semiconductor device including a gate wiring, an active layer, a gate insulating film, a first wiring, a second wring, and a first semiconductor film. The gate wiring includes a gate electrode. The active layer overlaps with the gate electrode and contains an oxide semiconductor. The gate insulating film is sandwiched by the gate electrode and the active layer. The first wiring and the second wiring are each located over the active layer and respectively include a first terminal and a second terminal which are electrically connected to the active layer. The first semiconductor film is located under and in contact with the first wiring and contains the oxide semiconductor.