US Patent 11626431 Photoelectric conversion apparatus, solid-state image sensor and device

A photoelectric conversion apparatus comprises a first semiconductor region of a first conductivity type arranged between a first surface and a second surface, a second semiconductor region of the first conductivity type arranged between the first surface and the second surface and configured to accumulate a signal charge generated by incident light, a third semiconductor region of the first conductivity type arranged between the first surface and the second surface, a fourth semiconductor region of the first conductivity type arranged between the first surface and the second surface and in contact with the third semiconductor region, a first transfer electrode arranged on the first surface, a semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface, and a semiconductor region of the second conductivity type arranged between the fourth semiconductor region and the second surface.