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US Patent 11631808 System and device including memristor material

Patent 11631808 was granted and assigned to Rockwell Collins on April, 2023 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

Rockwell Collins

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Current Assignee

Rockwell Collins

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Brandon C. Hamilton0

Nathaniel P. Wyckoff0

Steven J. Wiebers0

Kyle B. Snyder0

Bruce Rowenhorst0

Date of Patent

April 18, 2023

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Patent Application Number

171134060

Date Filed

December 7, 2020

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Patent Citations

US Patent 10429343 Tunable ionic electronic transistor

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US Patent 10332595 Determining resistance states of memristors in a crossbar array

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US Patent 10454025 Phase change memory with gradual resistance change

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US Patent 10804324 1T2R RRAM cell and common reactive electrode in crossbar array circuits

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US Patent 10810506 Qubit biasing scheme using non-volatile devices

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Patent Primary Examiner

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A system may include an array of interconnected memristors. Each memristor may include a first electrode, a second electrode, and a memristor material positioned between the first electrode and the second electrode. The system may further include a controller communicatively coupled to the array of interconnected memristors. The controller may be configured to tune the array of interconnected memristors.

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