Patent attributes
A power electronics converter includes a converter commutation cell having a power circuit and a gate driver circuit. The power circuit includes at least one power semiconductor switching element and at least one capacitor. Each power semiconductor switching element is included in a power semiconductor prepackage. The gate driver circuit is configured to provide switching signals to a gate terminal of each power semiconductor switching element, and a peak rated power output of the power electronics converter is greater than 25 kW and a value of a converter parameter γ is less than or equal to 150 fFs/W, where the converter parameter γ is a total rated capacitance of the at least one capacitor of the power circuit divided by a product of the peak rated power output of the power electronics converter and a maximum switching frequency of the switching signals.