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US Patent 11637114 Semiconductor memory device and manufacturing method thereof

Patent 11637114 was granted and assigned to SK Hynix on April, 2023 by the United States Patent and Trademark Office.

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A semiconductor memory device includes a first source layer, a second source layer on the first source layer, a stack structure over the second source layer, and a common source line penetrating the stack structure. The second source layer includes a protective layer in contact with the common source line and a conductive layer surrounding the protective layer.

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