Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Liang-Yin Chen0
Yee-Chia Yeo0
Wei-Ting Chien0
Su-Hao Liu0
Huicheng Chang0
Date of Patent
May 9, 2023
0Patent Application Number
172236000
Date Filed
April 6, 2021
0Patent Citations
Patent Primary Examiner
In accordance with some embodiments, a source/drain contact is formed by exposing a source/drain region through a first dielectric layer and a second dielectric layer. The second dielectric layer is recessed under the first dielectric layer, and a silicide region is formed on the source/drain region, wherein the silicide region has an expanded width.
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