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US Patent 11652006 FinFET complementary metal-oxide-semiconductor (CMOS) devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
January 18, 2022
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Date of Patent
May 16, 2023
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Patent Application Number
17577835
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Patent Citations
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US Patent 10043900 Vertical transport Fin field effect transistors on a substrate with varying effective gate lengths
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US Patent 10249533 Method and structure for forming a replacement contact
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US Patent 10176997 Direct gate patterning for vertical transport field effect transistor
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US Patent 10297668 Vertical transport fin field effect transistor with asymmetric channel profile
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US Patent 9484427 Field effect transistors having multiple effective work functions
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US Patent 10014391 Vertical transport field effect transistor with precise gate length definition
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Patent Inventor Names
Teresa Jacqueline Wu
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Chen Zhang
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Tenko Yamashita
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11652006
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Patent Primary Examiner
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Errol V Fernandes
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CPC Code
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H01L 21/28088
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H01L 21/823814
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H01L 21/823885
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