US Patent 11652153 Replacement gate formation in memory

The present disclosure includes methods for replacement gate formation in memory, and apparatuses and systems including memory formed accordingly. An embodiment includes forming a first oxide material in an opening through alternating layers of a second oxide material and a nitride material. An array of openings can be formed through the first oxide material formed in the opening. The layers of the nitride material can be removed. A metal material can be formed in voids resulting from the removal of the layers of the nitride material.