A memory array includes a plurality of column segments, each column segment including a plurality of columns of memory cells, a plurality of sense amplifiers selectively coupled to each column of the plurality of columns of a corresponding column segment, pluralities of first and second reference cells, and a reference current circuit. The reference current circuit generates a reference current based on a first current generated by a first reference cell programmed to a low logical value and a second current generated by a second reference cell programmed to a high logical value. Each sense amplifier generates a mirror current based on the reference current, and a logical value based on a comparison of the mirror current to a cell current received from a memory cell of a column of the plurality of columns of the corresponding column segment.