US Patent 11658215 Method of forming contact structures

A method according to the present disclosure includes receiving a workpiece that includes a first gate structure including a first cap layer thereon, a first source/drain contact adjacent the first gate structure, a second gate structure including a second cap layer thereon, a second source/drain contact, an etch stop layer (ESL) over the first source/drain contact and the second source/drain contact, and a first dielectric layer over the ESL. The method further includes forming a butted contact opening to expose the first cap layer and the first source/drain contact, forming a butted contact in the butted contact opening, after the forming of the butted contact, depositing a second dielectric layer, forming a source/drain contact via opening through the second dielectric layer, the ESL layer, and the first dielectric layer to expose the second source/drain contact, and forming a source/drain contact via in the source/drain contact via opening.