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US Patent 11662755 Low-noise high efficiency bias generation circuits and method
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Patent
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Current Assignee
pSemi
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Date Filed
November 18, 2021
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Date of Patent
May 30, 2023
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Patent Applicant
pSemi
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Patent Application Number
17530290
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Patent Citations
US Patent 7532061 Charge-pump type, voltage-boosting device with reduced ripple, in particular for non-volatile flash memories
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US Patent 7102449 Delay stage for oscillator circuit and corresponding applications
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US Patent 7126595 Image display device using a scanning and hold display mode for power saving purposes
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US Patent 7129796 Oscillator circuit with supporting transistor for voltage sweep
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US Patent 7180794 Oscillating circuit, booster circuit, nonvolatile memory device, and semiconductor device
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US Patent 7256642 Booster circuit, semiconductor device, and electronic apparatus
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US Patent 9413362 Differential charge pump
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US Patent 9429969 Low-noise high efficiency bias generation circuits and method
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US Patent 9584133 Temperature compensated oscillator with improved noise performance
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US Patent 9685963 Variable frequency charge pump
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•••
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11662755
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Patent Primary Examiner
Yemane Mehari
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CPC Code
H02M 3/073
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H02M 3/156
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H02M 3/1588
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G05F 1/56
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G05F 1/468
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H03F 1/56
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H03F 1/303
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H02M 3/07
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